The key terms here seem to be "MOS metal oxide semiconductor physics and technology." This topic is fundamental in the field of semiconductor devices, which are crucial for modern electronics.
| Classic (Si/SiO₂) | Modern (High-κ / III-V) | | --- | --- | | Single dielectric | Bilayer/interlayer modeling (quantum mechanical tunneling) | | Isotropic interface | Anisotropic interface traps (e.g., GaAs, InGaAs) | | Negligible border traps | Slow oxide traps (border traps) important for reliability | | Boltzmann transport | Full quantum transport (NEGF) for sub-10nm nodes | The key terms here seem to be "MOS
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Previews and Archives: Limited views are often available on Google Books or through the Internet Archive. MOS (Metal Oxide Semiconductor) Physics and Technology Any SS >
The evolution of MOS technology continues to drive the advancement of modern electronics, enabling more powerful, efficient, and compact devices across a wide range of applications.
Any SS > 60 mV/dec wastes power. Steep-slope devices (TFETs, negative capacitance FETs) aim to beat this limit.